Numerical and experimental characterization of single- and double-gate race-track-shaped field emitter structures

Author

Wang, Baoping ; Sin, Johnny K O ; Cai, Jun ; Poon, Vincent M C ; Wang, Chen ; Tang, Yongming ; Tong, Linsu

Author_Institution

Southeast Univ., Nanjing, China

Volume

45

Issue

2

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

554

Lastpage

559

Abstract

In this paper, numerical and experimental characterization of new singleand double-gate race-track-shaped field emitter structures are reported. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage and minimum gate current. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100 V, and the field emission current density is approximately 2.4 A/cm². Furthermore, field emission characteristics of the single- and double-gate structures are numerically simulated. Results show that turn-on voltage of the double-gate structure is reduced by 30% and ratio of anode current to gate current is increased by 36 times compared to that of the single-gate structure at a gate voltage of 350 V

Keywords

electron field emission; vacuum microelectronics; 100 V; 350 V; double-gate control; double-gate structures; edge emission; experimental characterization; field emission current density; field emitter structures; numerical characterization; race-track-shape; single-gate structures; Anodes; Current density; Electron emission; Flat panel displays; Microelectronics; Numerical simulation; Radiofrequency amplifiers; Silicon compounds; Solid state circuits; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658693

Filename

658693