Title :
400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance
Author :
Zeng, Yuping ; Ostinelli, Olivier ; Lövblom, Rickard ; Alt, Andreas R. ; Benedickter, Hansruedi ; Bolognesi, C.R.
Author_Institution :
Millimeter-Wave Electron. Group, ETH-Zurich, Zürich, Switzerland
Abstract :
We report self-aligned 0.3-μm emitter InP/GaAsSb/ InP DHBTs featuring a common-emitter current gain of 46 and cutoff frequencies fT = 400 GHz and fMAX = 322 GHz for devices implemented with a 20-nm C-doped base and a 75-nm InP collector. Our DHBTs display attractive noise properties with a minimum noise figure NFmin = 1.2 dB at 20 GHz, which is nearly independent of frequency over the 2-20-GHz measurement band. This represents an improvement of at least 2.3 dB with respect to previously published results for GaAsSb-based devices, due to process improvements that allow good RF characteristics to be maintained at the low current levels required for low noise operation. Analysis shows that the low-frequency NFmin is limited by the relatively low current gain values typical of III-V HBTs. InP/GaAsSb DHBTs could be attractive low-noise devices for higher frequencies.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave devices; III-V HBT; InP-GaAsSb; InP/GaAsSb DHBT; RF characteristic; frequency 2 GHz to 20 GHz; frequency 20 GHz; frequency 322 GHz; frequency 400 GHz; low-noise device; low-noise microwave performance; noise figure 1.2 dB; size 0.3 micron; Double heterojunction bipolar transistors; Gain; Indium phosphide; Integrated circuits; Microwave transistors; Noise; Silicon germanium; Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; millimeter-wave transistors; minimum noise figure;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2061213
