Title :
High-power rectifier using the BSIT operation
Author :
Yano, Koji ; Henmi, Isao ; Kasuga, Masanobu ; Shimizu, Azuma
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Yamanashi Univ., Kofu, Japan
fDate :
2/1/1998 12:00:00 AM
Abstract :
A novel high-power rectifier using the BSIT (Bipolar mode Static Induction Transistor) operation has been demonstrated. In order to improve the reverse blocking capability of this diode, an ion implanted P-type channel structure is introduced. Device simulations have revealed that, as the tradeoff relationships between reverse blocking voltage, forward voltage drop, and reverse recovery time are considered, there exists an optimum set of the channel dosage and the channel width
Keywords :
electric breakdown; ion implantation; power semiconductor diodes; solid-state rectifiers; BSIT operation; bipolar mode static induction transistor operation; channel dosage; channel width; forward voltage drop; high-power rectifier; ion implanted P-type channel structure; reverse blocking capability; reverse recovery time; Breakdown voltage; Circuit simulation; Frequency; Motor drives; P-i-n diodes; PIN photodiodes; Power supplies; Rectifiers; Schottky diodes; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
