• DocumentCode
    1306536
  • Title

    Effects of nitrogen implant activation on the SiC/SiO2 interface of 6H-SiC self-aligned NMOSFET´s

  • Author

    Lam, M.P. ; Das, M.K. ; Pan, J.N. ; Kornegay, K.T. ; Cooper, J.A., Jr. ; Melloch, M.R.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    45
  • Issue
    2
  • fYear
    1998
  • fDate
    2/1/1998 12:00:00 AM
  • Firstpage
    565
  • Lastpage
    567
  • Abstract
    The implant anneal process for 6H-SiC self-aligned NMOS transistors will degrade the SiO2/SiC interface. The interface is of great concern because it reduces the performance of MOS transistors. The effect of anneal time and temperature on the effective oxide charge and interface state density is presented. The optimal anneal for self-aligned NMOS transistors is obtained by choosing the anneal condition with the highest implant activation that causes the least damage to the interface
  • Keywords
    annealing; interface states; ion implantation; nitrogen; power MOSFET; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; 6H-SiC self-aligned NMOSFET; N implant activation; NMOS transistors; SiC-SiO2; SiC/SiO2 interface; anneal temperature; anneal time; effective oxide charge; implant anneal process; interface damage; interface state density; Annealing; Implants; MOSFET circuits; Nitrogen; P-i-n diodes; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.658696
  • Filename
    658696
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306536