Title :
Fast and accurate IGBT model for PSpice
Author :
Sheng, Kun ; Finney, Stephen J. ; Williams, Barry W.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh
fDate :
12/5/1996 12:00:00 AM
Abstract :
A new PSpice IGBT model is presented which combines existing BJT and MOSFET models and equations to give a more realistic drain-gate capacitance model. Electrical simulation performance gives the accuracy of complex equation based models, but involves the computational time of simple inaccurate model based approaches. Simulation and experimental results vindicate the new model
Keywords :
SPICE; insulated gate bipolar transistors; semiconductor device models; BJT; IGBT; MOSFET; PSpice model; drain-gate capacitance; electrical simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961548
