• DocumentCode
    1306566
  • Title

    Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy

  • Author

    Dobbelaere, Wim ; De Boeck, Jo ; Van Hove, Marleen ; Deneffe, K. ; De Raedt, W. ; Mertens, Robert ; Borghs, G.

  • Author_Institution
    Interuniv. Micro-Electron. Center, Leuven, Belgium
  • Volume
    26
  • Issue
    4
  • fYear
    1990
  • Firstpage
    259
  • Lastpage
    261
  • Abstract
    InAs0.05Sb0.95 photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420 V/W at 77 K and 300 meV photon energy with a load resistor of 100 Omega and a bias voltage of 1.5 V.
  • Keywords
    III-V semiconductors; indium antimonide; indium compounds; infrared detectors; molecular beam epitaxial growth; photoconducting devices; semiconductor growth; 1.5 V; 100 ohm; 300 meV; 77 K; Si wells; bias voltage; load resistor; long wavelength IR detectors; molecular beam epitaxy; photoconductive InAsSb detectors; photon energy; voltage responsivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900173
  • Filename
    82595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306566