DocumentCode
1306612
Title
242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity
Author
Bagley, M. ; Wyatt, R. ; Elton, D.J. ; Spurdens, P.C. ; Cooper, Diana Marina ; Devlin, W.J.
Author_Institution
British Telecom. Res. Labs., Ipswich, UK
Volume
26
Issue
4
fYear
1990
Firstpage
267
Lastpage
269
Abstract
Multiple quantum well (MQW) buried heterostructure (BH) lasers in the InGaAsP/InP system have been continuously tuned from 1320 nm to 1562 nm in a grating extended cavity. A power output of 45 mW was obtained at 1510 nm and 350 mA continuous current.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser cavity resonators; laser tuning; semiconductor junction lasers; 1320 to 1562 nm; 1510 nm; 350 mA; 45 mW; GRIN-SC-MQW-BH InGaAsP laser; InGaAsP-InP; buried heterostructure lasers; continuous current; continuous tuning; extended cavity; grating extended cavity; multiple quantum well; power output;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900178
Filename
82600
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