DocumentCode :
1306630
Title :
Low-drive-voltage MQW electroabsorption modulator for optical short-pulse generation
Author :
Oshiba, Saeko ; Nakamura, Koji ; Horikawa, Hideaki
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Volume :
34
Issue :
2
fYear :
1998
fDate :
2/1/1998 12:00:00 AM
Firstpage :
277
Lastpage :
281
Abstract :
This paper reports on InGaAsP-InGaAsP tensile strained MQW electroabsorption (EA) modulators with a high modulation efficiency of 35 GHz/V that generate optical short pulses. We studied and optimized the multiple-quantum-well (MQW) structural parameters, barrier height, and well number, thickness, and strain in the absorption layer to ensure high attenuation efficiency and generate low duty cycle pulses. Low TE/TM polarization sensitivity was obtained by controlling strain. Stable, nearly transform-limited optical pulse trains with a narrow pulsewidth of 3.6 ps are generated by applying a 20-GHz sinusoidal modulation voltage (6 Vpp) to the EA modulator. This achieves a very small pulse duty cycle of 7.2%
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; light polarisation; semiconductor quantum wells; sensitivity; 3.6 ps; EA modulator; GHz sinusoidal modulation voltage; InGaAsP-InGaAsP; InGaAsP-InGaAsP tensile strained MQW electroabsorption modulators; absorption layer strain; absorption layer thickness; barrier height; high attenuation efficiency; high modulation efficiency; low TE/TM polarization sensitivity; low duty cycle pulse generation; low-drive-voltage MQW electroabsorption modulator; multiple-quantum-well structural parameters; narrow pulsewidth; optical short pulse generation; optical short-pulse generation; stable nearly transform-limited optical pulse trains; very small pulse duty cycle; well number; Absorption; Capacitive sensors; Optical attenuators; Optical modulation; Optical pulse generation; Optical pulses; Optical sensors; Pulse modulation; Quantum well devices; Structural engineering;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.658708
Filename :
658708
Link To Document :
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