• DocumentCode
    1306654
  • Title

    Room temperature observation of mid-infrared inter-subband absorption activated by near-infrared illumination in multiple quantum wells

  • Author

    Delacourt, D. ; Papillon, D. ; Pocholle, J.P. ; Schnell, J.P. ; Papuchon, M.

  • Author_Institution
    Thomson-CSF/LCR, Domaine de Corbeville, Orsay, France
  • Volume
    26
  • Issue
    5
  • fYear
    1990
  • fDate
    3/1/1990 12:00:00 AM
  • Firstpage
    277
  • Lastpage
    279
  • Abstract
    The authors report the near-infrared optical activation of inter-subband transitions in a 250 period GaAs/Ga0.75Al0.25As multiple quantum well structure free from intentional doping (undoped). A 0.5% resonant absorption peak around 10.2 mu m has been observed at room temperature under a 320 W/cm2 near-infrared illumination at 0.835 mu m.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra of inorganic solids; optical properties of substances; semiconductor quantum wells; 0.835 micron; 10.2 micron; GaAs-Ga 0.75Al 0.25As multiple quantum well structure; III-V semiconductor; IR spectra; MQW; mid-infrared inter-subband absorption; multiple quantum wells; near-infrared illumination; near-infrared optical activation; resonant absorption peak; room temperature; undoped;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900184
  • Filename
    82610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306654