DocumentCode
1306657
Title
Er3+-doped Al2O3 thin films by plasma-enhanced chemical vapor deposition (PECVD) exhibiting a 55-nm optical bandwidth
Author
Chryssou, C.E. ; Pitt, C.W.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Volume
34
Issue
2
fYear
1998
fDate
2/1/1998 12:00:00 AM
Firstpage
282
Lastpage
285
Abstract
We report the first deposition of Er3+-doped aluminum oxide thin-film optical waveguides by plasma-enhanced chemical vapor deposition (PECVD). The aluminum and erbium precursors used for the deposition of the thin films were trimethyl-aluminum and Er tri-chelate of 2,2,6,6-tetramethylheptane-3,5 dione respectively. The samples show broad, room-temperature photoluminescence at λ=1.533 μm. The Er3+ concentration ranged from 0.01-0.2 at%. The full width half maximum (FWHM) of the Er3+ emission spectrum is 55 nm, considerably broader than in silica glass. The radiative lifetime has been measured at 50-mW pump power
Keywords
alumina; erbium; infrared spectra; optical fabrication; optical films; optical pumping; optical waveguides; photoluminescence; radiative lifetimes; vapour phase epitaxial growth; 1.533 mum; 2,2,6,6-tetramethylheptane-3,5 dione; 50 mW; Al2O3:Er; Er tri-chelate; Er3+ emission spectrum; Er3+-doped Al2O3 thin films; mW pump power; plasma-enhanced chemical vapor deposition; radiative lifetime; room-temperature photoluminescence; trimethyl-aluminum; Aluminum oxide; Chemical vapor deposition; Erbium; Optical films; Optical pumping; Optical waveguides; Photoluminescence; Plasma chemistry; Plasma waves; Sputtering;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.658711
Filename
658711
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