Title :
Insulator passivation of In0.2Ga0.8As-GaAs surface quantum wells
Author :
Passlack, M. ; Hong, M. ; Harris, T.D. ; Mannaerts, J.P. ; Vakhshoori, D. ; Schnoes, M.L.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
2/1/1998 12:00:00 AM
Abstract :
The electronic passivation of (100) In0.2Ga0.8 As-GaAs surface quantum wells (QWs) using in situ deposition of an amorphous, insulating Ga2O3 film has been investigated and compared to standard Al0.45Ga0.55As passivation. Nonradiative lifetimes τr=1.1±0.2 and 1.2±0.2 ns have been inferred from the dependence of the internal quantum efficiency η on optical excitation density P0´ for the Ga2O3 and Al0.45Ga0.55As passivated In0.02 Ga0.8As-GaAs surface QW, respectively. Beyond identical internal quantum efficiency, the amorphous Ga2O3 insulator passivation simplifies device processing, eludes problems arising from lattice-mismatched interfaces, and virtually eliminates band bending in electronic and optoelectronic devices based on a low dimensional system such as quantum wells, wires, and dots
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nonradiative transitions; passivation; photoluminescence; semiconductor quantum wells; Al0.45Ga0.55As; Al0.45Ga0.55As passivation; Ga2O3; Ga2O3 passivation; In0.2Ga0.8As-GaAs; In0.2Ga0.8As-GaAs surface quantum wells; amorphous insulating Ga2O3 film; band bending; electronic devices; electronic passivation; in situ deposition; insulator passivation; internal quantum efficiency; lattice-mismatched interfaces; low dimensional system; nonradiative lifetimes; optical excitation density; optoelectronic devices; quantum dots; quantum wells; quantum wires; room temperature photoluminescence; Amorphous materials; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Optical films; Optoelectronic devices; Passivation; Quantum dots; Radiative recombination; Wires;
Journal_Title :
Quantum Electronics, IEEE Journal of
