Title :
Characterisation and comparison of failure modes in III-V avalanche photodiodes
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
3/1/1990 12:00:00 AM
Abstract :
To determine the reliability of III-V avalanche photodiodes, (APDs) for use in future telecommunications systems, devices from two commercial sources were characterised and subjected to thermally accelerated lifetests. A variety of nondestructive characterisation techniques were applied to unstressed and failed APDs. Results showed that the devices from one source failed by local avalanche breakdown in the InP capping layer, whereas devices from the other source had increases of unmultiplied dark current.
Keywords :
III-V semiconductors; avalanche photodiodes; failure analysis; life testing; reliability; semiconductor device testing; III-V avalanche photodiodes; InP capping layer; failed APDs; failure modes; future telecommunications systems; local avalanche breakdown; nondestructive characterisation techniques; reliability; semiconductors; thermally accelerated lifetests; unmultiplied dark current; unstressed APD;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900197
