• DocumentCode
    1306764
  • Title

    Porous silicon techniques for SOI structures

  • Author

    Tsao, Sylvia S.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    3
  • Issue
    6
  • fYear
    1987
  • Firstpage
    3
  • Lastpage
    7
  • Abstract
    Among the most promising techniques for producing silicon-on-insu-lator (SOI) substrates suitable for fabrication of high-performance devices are those based on the oxidation of porous silicon. Porous silicon has a unique set of material properties, which lends itself to a variety of different SOI fabrication techniques.
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/MCD.1987.6323172
  • Filename
    6323172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306764