Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

Author

Hsin, W. ; Du, G. ; Gamelin, J.K. ; Malloy, K.J. ; Wang, S. ; Whinnery, 1.R. ; Yang, Y.J. ; Dziura, T.G. ; Wang, S.C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

26

Issue

5

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

307

Lastpage

308

Abstract

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 AA. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optics; laser cavity resonators; laser transitions; semiconductor junction lasers; 1.5 mA; 891 nm; AlGaAs multilayer; FWHM; GaAs; GaAs substrate; integrated optics; laser arrays; light emission; low threshold distributed Brigg reflector; room temperature CW operation; semiconductor lasers; semiconductor multilayer air-bridge-supported top mirror; spectrum peak; surface emitting laser diode; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900202

Filename

82628