• DocumentCode
    1306775
  • Title

    SOI technology using buried layers of oxidized porous Si

  • Author

    Barla, Kathy ; Bomchil, Guillermo ; Herino, Roland ; Monroy, Agustin

  • Author_Institution
    CNET, Grenoble, France
  • Volume
    3
  • Issue
    6
  • fYear
    1987
  • Firstpage
    11
  • Lastpage
    15
  • Abstract
    Porous silicon was formed in the highly doped layers of an n/n+/n structure. After full oxidation of porous silicon, CMOS devices were fabricated in insulated single-crystal silicon islands. Mobilities comparable to bulk silicon are measured, and low-leakage junctions are realized.
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/MCD.1987.6323174
  • Filename
    6323174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306775