DocumentCode
1306928
Title
Dual-Input Pseudo-Switch RF Low Noise Amplifier
Author
Zito, Domenico ; Fonte, Alessandro
Author_Institution
Univ. Coll. Cork, Cork, Ireland
Volume
57
Issue
9
fYear
2010
Firstpage
661
Lastpage
665
Abstract
A dual-input low noise amplifier (DILNA) topology with pseudo-switch capability is presented. This novel solution allows us to avoid the use of the RF switch in all cases in which the LNA input has to be switched alternatively between two different RF sources. This is obtained by duplicating the input stage of the LNA and creating two concurrent stages. In the particular case of 13-GHz radiometric applications, the DILNA circuit has been realized in 90-nm CMOS technology, and the measurement results have shown a noise figure of 2.5 dB, a power gain close to 19 dB from both inputs, an input-output isolation close to -60 dB, and an isolation between the two inputs of about -45 dB at 13 GHz. The power consumption amounts to 17.38 mW from a 1.1-V supply voltage. These results represent one of the best sets of performance among those presented in the literature.
Keywords
CMOS integrated circuits; low noise amplifiers; radiofrequency amplifiers; radiometry; CMOS technology; dual-input pseudo-switch RF low noise amplifier; frequency 13 GHz; input-output isolation; noise figure 2.5 dB; power 17.38 mW; radiometers; size 90 nm; voltage 1.1 V; Impedance; Microwave radiometry; Noise; Noise measurement; Radio frequency; Receivers; Switches; Complementary metal–oxide–semiconductor (CMOS); dual input; low noise amplifier (LNA); radio-frequency (RF) switch; receiver; system-on-chip radiometer; temperature sensor;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2010.2058491
Filename
5559382
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