• DocumentCode
    1306928
  • Title

    Dual-Input Pseudo-Switch RF Low Noise Amplifier

  • Author

    Zito, Domenico ; Fonte, Alessandro

  • Author_Institution
    Univ. Coll. Cork, Cork, Ireland
  • Volume
    57
  • Issue
    9
  • fYear
    2010
  • Firstpage
    661
  • Lastpage
    665
  • Abstract
    A dual-input low noise amplifier (DILNA) topology with pseudo-switch capability is presented. This novel solution allows us to avoid the use of the RF switch in all cases in which the LNA input has to be switched alternatively between two different RF sources. This is obtained by duplicating the input stage of the LNA and creating two concurrent stages. In the particular case of 13-GHz radiometric applications, the DILNA circuit has been realized in 90-nm CMOS technology, and the measurement results have shown a noise figure of 2.5 dB, a power gain close to 19 dB from both inputs, an input-output isolation close to -60 dB, and an isolation between the two inputs of about -45 dB at 13 GHz. The power consumption amounts to 17.38 mW from a 1.1-V supply voltage. These results represent one of the best sets of performance among those presented in the literature.
  • Keywords
    CMOS integrated circuits; low noise amplifiers; radiofrequency amplifiers; radiometry; CMOS technology; dual-input pseudo-switch RF low noise amplifier; frequency 13 GHz; input-output isolation; noise figure 2.5 dB; power 17.38 mW; radiometers; size 90 nm; voltage 1.1 V; Impedance; Microwave radiometry; Noise; Noise measurement; Radio frequency; Receivers; Switches; Complementary metal–oxide–semiconductor (CMOS); dual input; low noise amplifier (LNA); radio-frequency (RF) switch; receiver; system-on-chip radiometer; temperature sensor;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2010.2058491
  • Filename
    5559382