Title :
Noise tuning of GaAs-MESFET oscillators
Author_Institution :
Lehrstuhl fur Hochfrequenztech., Erlangen-Nurnberg Univ., West Germany
fDate :
3/1/1990 12:00:00 AM
Abstract :
The main cause of phase-noise in microwave GaAs-MESFET oscillators is the upconversion of the 1/f noise from the baseband. A large signal analysis of an oscillator circuit shows how the phase noise can be influenced by tuning the FET´s input circuit. The noise tuning of a microstrip oscillator verifies the computation.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; hybrid integrated circuits; microwave integrated circuits; microwave oscillators; nonlinear network analysis; random noise; tuning; GaAs; III-V semiconductors; MIC; baseband 1/f noise upconversion; computation; input circuit tuning; large signal analysis; microstrip oscillator; microwave MESFET oscillator; noise tuning; oscillator circuit; phase-noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900207
