Title :
High-temperature operation of 1.3-/spl mu/m tapered-active-stripe laser for direct coupling to single-mode fiber
Author :
Inaba, Yuichi ; Kito, Masahiro ; Nishikawa, Tohru ; Ishino, Masato ; Matsui, Yasushi
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
High-temperature operation of 1.3-μm wavelength multiquantum-well (MQW) lasers with an active stripe horizontally tapered over whole cavity, for direct coupling to single-mode fibers (SMFs), are reported. The lasers have reduced the output-beam divergence in a simple structure which does not contain an additional spot-size transformer. To improve high-temperature characteristics, we have investigated the influence of the thickness of separate-confinement-heterostructure layers and the number of quantum wells (QWs) on the threshold current and the output-beam divergence at high temperature. As a result, the fabricated lasers show low-threshold current (∼18 mA) and high-slope efficiency (∼0.4 mW/mA) with narrow output-beam divergence (∼12°) at 85°C. Moreover, we have obtained maximum coupling efficiency of -4.7 dB in a direct coupling to a SMF, and the reliability of longer than 10 5 h (MTTF) by a lifetime test of over 2000 h at 85°C.
Keywords :
laser beams; laser cavity resonators; laser reliability; laser transitions; life testing; modules; optical fibre couplers; optical transmitters; quantum well lasers; semiconductor device reliability; semiconductor device testing; 1.3 mum; 100000 h; 18 mA; 2000 h; 85 C; MQW lasers; active stripe; direct coupling; high-temperature characteristics; high-temperature operation; horizontally tapered; lifetime test; output-beam divergence; quantum wells; reliability; separate-confinement-heterostructure layers; single-mode fiber coupling; tapered-active-stripe laser; threshold current; whole cavity; Fiber lasers; Laser modes; Optical coupling; Optical fiber devices; Optical waveguides; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.658794
