Proposal of low-noise amplifier utilizing resonant tunneling transistors

Author

Ando, Yuji ; Cappy, Alain

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Otsu, Japan

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

31

Lastpage

35

Abstract

A low-noise amplifier utilizing the negative input resistance of resonant tunneling transistors (RTT´s) is proposed. Expected features of the RTT amplifiers are: 1) negligible effect of noise sources at the output, owing to their large power gain; 2) flat variation of noise figure (NF) versus frequency, due to white spectra of noise sources at the input; and 3) a high maximum oscillation frequency (f_max) (over several 100 GHz), Based on simulated DC characteristics, over 500 GHz f_max and 0.3 dB NF at 100 GHz are predicted for optimized AlGaAs/GaAs/AlGaAs resonant tunneling diodes (RTD´s). In an RTT formed by coupling an FET to an optimized RTD, 0.55 dB minimum noise figure and 26 dB associated gain are predicted at 100 GHz. Also, a 1/w² spectrum of the input noise resistance is predicted at low frequencies

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; millimetre wave amplifiers; millimetre wave circuits; negative resistance; power amplifiers; resonant tunnelling transistors; semiconductor device noise; white noise; 0.3 dB; 0.55 dB; 100 GHz; 26 dB; AlGaAs-GaAs-AlGaAs; input noise resistance; maximum oscillation frequency; microwave low-noise amplifier; negative input resistance; noise figure; output noise sources; power gain; resonant tunneling transistors; simulated DC characteristics; white spectra; Frequency; Gallium arsenide; High power amplifiers; Low-noise amplifiers; Noise figure; Noise measurement; Predictive models; Proposals; Resonant tunneling devices; White noise;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658808

Filename

658808