Distribution of recombination currents in the space charge region of heterostructure bipolar devices

Author

Pallarès, J. ; Marsal, L.F. ; Correig, X. ; Calderer, J. ; Alcubilla, R.

Author_Institution

Dept. d´´Enginyeria Electron., Univ. Rovira i Virgili, Tarragona, Spain

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

54

Lastpage

61

Abstract

This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The approach is based on the drift-diffusion model with a thermionic-field emission boundary condition. The main physical parameters which determine the relative contribution of each zone of the space charge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crystalline heterojunctions and design criteria are established to minimize the total recombination current

Keywords

electron field emission; electron-hole recombination; heterojunction bipolar transistors; semiconductor device models; space-charge-limited conduction; Shockley-Read-Hall recombination; amorphous/crystalline heterojunctions; drift-diffusion model; heterostructure bipolar devices; noncrystalline side; physical parameters; recombination currents; space charge region; thermionic-field emission boundary condition; Amorphous materials; Boundary conditions; Crystallization; Doping; Energy states; Heterojunction bipolar transistors; Radiative recombination; Space charge; Thermionic emission; Thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658811

Filename

658811