Title :
Optical effect in InAlAs/InGaAs/InP MODFET
Author :
Mitra, H. ; Pal, B.B. ; Singh, S. ; Khan, R.U.
Author_Institution :
D.L.W., Varanasi, India
fDate :
1/1/1998 12:00:00 AM
Abstract :
Analytical results have been presented for an optically illuminated InAlAs/InGaAs/InP MODFET with an opaque gate. Partial depletion of the active region is considered. The excess carriers due to photo generation are obtained by solving the continuity equation. The energy levels are modified due to the generation of carriers. The surface recombination effect has also been taken into account. The results of I-V characteristics have been compared under dark conditions, since under illumination experimental results are not available. The offset voltage, sheet concentration, I-V, and transconductance have been presented and the effect of illumination discussed
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; photodetectors; photovoltaic effects; surface recombination; two-dimensional electron gas; I-V characteristics; InAlAs-InGaAs-InP; InAlAs-InGaAs-InP MODFET; active region; continuity equation; dark condition; energy level modification; excess carriers; high speed photodetector; microwave application; offset voltage; opaque gate; optical effect; optically illuminated HEMT; partial depletion; photogeneration; sheet concentration; surface recombination effect; transconductance; ultra high speed device; Energy states; Equations; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lighting; MODFETs; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
