Temperature Sensor in a Flexible Substrate

Author

Ahmed, Moinuddin ; Chitteboyina, Murali M. ; Butler, Donald P. ; Celik-Butler, Zeynep

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA

Volume

12

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

864

Lastpage

869

Abstract

This paper presents the fabrication and measured performance of temperature sensors embedded in flexible polyimide substrates. The sensing material used for the temperature sensor was undoped amorphous silicon which was fabricated on a 35-m-thick layer of polyimide that serves as the flexible substrate. Another flexible polyimide superstrate layer of 35-40 m was spin-coated on top of the sensors to make sure the temperature sensors lie on a zero stress plane. The temperature coefficient of resistance was measured over the temperature range of 200- 360 K. The maximum temperature coefficient of resistance at 30 C was measured to be 0.0288 K^-1. The effect of the flicker noise and voltage dependence of the voltage noise power spectral density exhibited by the sensor was evaluated. The normalized flicker noise coefficient was found to be 1.2 × 10^-11.

Keywords

flicker noise; temperature sensors; flexible polyimide substrates; normalized flicker noise coefficient; size 35 mum to 40 mum; temperature 200 K to 360 K; temperature 30 degC; temperature sensor; undoped amorphous silicon; voltage noise power spectral density; Noise; Resistance; Silicon; Substrates; Temperature measurement; Temperature sensors; Flexible substrate; flicker noise; temperature coefficient of resistance; temperature sensor;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2011.2166064

Filename

5999683