Title :
Thin-film quasi-SOI power MOSFET fabricated by reversed silicon wafer direct bonding
Author :
Matsumoto, Satoshi ; Yachi, Toshiaki ; Horie, Hiroshi ; Arimoto, Yoshihiro
Author_Institution :
NTT Integrated Inf. & Energy Labs., Tokyo, Japan
fDate :
1/1/1998 12:00:00 AM
Abstract :
A quasi-SOI power MOSFET has been fabricated by reversed silicon wafer direct bonding. In this power MOSFET, the buried oxide under the channel and source regions is removed and the channel region is directly connected to the source body contact electrode to reduce the base resistance of the parasitic npn bipolar transistor. The quasi-SOI power MOSFET can suppress the parasitic bipolar action and shows lower specific on-resistance than that of the conventional SOI power MOSFET. The fabricated chip level quasi-SOI power MOSFET shows the specific on-resistance of 86 mΩ·mm2 and on-state breakdown voltage of 30 V
Keywords :
buried layers; electric breakdown; power MOSFET; silicon; silicon-on-insulator; thin film transistors; wafer bonding; 30 V; Si; base resistance reduction; buried oxide removal; fabrication; on-state breakdown voltage; parasitic NPN bipolar transistor; parasitic bipolar action suppression; quasi-SOI power MOSFET; reversed Si wafer direct bonding; source body contact electrode; specific on-resistance; thin-film power MOSFET; Bipolar transistors; Electrodes; Immune system; MOSFET circuits; Power MOSFET; Semiconductor thin films; Silicon on insulator technology; Substrates; Thin film devices; Wafer bonding;
Journal_Title :
Electron Devices, IEEE Transactions on
