A physically-based model of the effective mobility in heavily-doped n-MOSFETs

Author

Villa, Stefano ; Lacaita, Andrea L. ; Perron, Laura M. ; Bez, Roberto

Author_Institution

Politecnico di Milano, Italy

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

110

Lastpage

115

Abstract

We present a new analytical mobility model for channel electrons in heavily-doped MOSFETs biased from weak to strong inversion suitable for implementation in device simulation codes. The model accounts for the two-dimensionality of the electron gas and for the effect of charge trapping on the measurements and has been validated by comparing the theoretical curves with an extensive set of mobility measurements performed on devices with channel doping ranging from 3.8×10¹⁷ to 1.25×10¹⁸ cm^-3 over a wide bias and temperature range (141-400 K)

Keywords

MOSFET; electron mobility; electron traps; heavily doped semiconductors; inversion layers; semiconductor device models; two-dimensional electron gas; 141 to 400 K; analytical mobility model; channel electrons; charge trapping; device simulation codes; effective mobility; electron gas two-dimensionality; heavily-doped n-MOSFET; mobility measurements; physically-based model; strong inversion; wide bias range; wide temperature range; Analytical models; Charge measurement; Current measurement; Doping; Electron mobility; Electron traps; MOSFETs; Performance evaluation; Semiconductor process modeling; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658819

Filename

658819