DocumentCode :
1307372
Title :
Physical modeling of temperature dependences of SOI CMOS devices and circuits including self-heating
Author :
Workman, Glenn O. ; Fossum, Jerry G. ; Krishnan, Srinath ; Pelella, Mario M., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume :
45
Issue :
1
fYear :
1998
fDate :
1/1/1998 12:00:00 AM
Firstpage :
125
Lastpage :
133
Abstract :
To simulate and examine temperature and self-heating effects in Silicon-On-Insulator (SOI) devices and circuits, a physical temperature-dependence model is implemented into the SOISPICE fully depleted (FD) and nonfully depleted (NFD) SOI MOSFET models. Due to the physical nature of the device models, the temperature-dependence modeling, which enables a device self-heating option as well, is straightforward and requires no new parameters. The modeling is verified by DC and transient measurements of scaled test devices, and in the process physical insight on floating-body effects in temperature is attained. The utility of the modeling is exemplified with a study of the temperature and self-heating effects in an SOI CMOS NAND ring oscillator. SOISPICE transient simulations of the circuit, with floating and tied bodies, reveal how speed and power depend on ambient temperature, and they predict no significant dynamic self-heating, irrespective of the ambient temperature
Keywords :
CMOS integrated circuits; MOSFET; SPICE; equivalent circuits; integrated circuit modelling; semiconductor device models; silicon-on-insulator; transient analysis; NAND ring oscillator; SOI CMOS circuits; SOI CMOS devices; SOISPICE; Si; ambient temperature; floating-body effects; fully depleted SOI MOSFET models; partially depleted SOI MOSFET models; physical modeling; self-heating effects; temperature dependence; temperature-dependence modeling; transient simulations; Circuit simulation; Circuit testing; Integrated circuit modeling; MOSFET circuits; Ring oscillators; Semiconductor device modeling; Silicon on insulator technology; Temperature dependence; Thermal conductivity; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.658822
Filename :
658822
Link To Document :
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