Title :
Investigation of a multigigahertz MOSFET amplifier with an on-chip inductor fabricated on a SIMOX wafer
Author :
Harada, Mitsuru ; Yamaguchi, Chikara ; Tsuchiya, Toshiaki
Author_Institution :
NTT System Electron. Labs., Kanagawa, Japan
fDate :
1/1/1998 12:00:00 AM
Abstract :
This paper describes a technology that can be used to integrate multigigahertz RF circuits into large-scale digital circuits. Spiral inductors and a MOSFET amplifier with an inductive load were fabricated on a SIMOX wafer in order to demonstrate the feasibility of SOI technology. With a 1-V supply voltage, peaking of the amplifier gain was observed, as expected from circuit simulations, at 1-4 GHz. These results show that RF circuits with inductors can be implemented on a SIMOX wafer by using the conventional digital CMOS LSI process
Keywords :
CMOS digital integrated circuits; MOSFET circuits; SIMOX; UHF amplifiers; inductors; large scale integration; 1 V; 1 to 4 GHz; CMOS LSI process; RF circuit; SIMOX wafer; SOI technology; circuit simulation; fabrication; large-scale digital circuit; multigigahertz MOSFET amplifier; on-chip inductor; spiral inductor; CMOS technology; Circuit simulation; Digital circuits; Inductors; Large scale integration; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; Spirals; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
