Negative Differential Resistance in Mono and Bilayer Graphene p-n Junctions

Author

Fiori, G.

Author_Institution

Dipt. di Ing. dell´Inf., Elettron., Inf., Telecomun., Univ. di Pisa, Pisa, Italy

Volume

32

Issue

10

fYear

2011

Firstpage

1334

Lastpage

1336

Abstract

In this letter, we study the electrical characteristics of monolayer and bilayer graphene p-n junctions through the self-consistent solution of the 2-D Poisson and Schrödinger equations within the Non-Equilibrium Green´s Function (NEGF) formalism. Negative differential resistance is observed in both devices at room temperatures, which opens the possibility of exploiting graphene in analog electronics. An analytical expression, which is suitable for a fast exploration along the parameter space, is provided and compared against the tight-binding model, showing good agreement.

Keywords

Green´s function methods; Poisson equation; Schrodinger equation; graphene; monolayers; p-n junctions; 2D Poisson equations; 2D Schrödinger equations; analog electronics; bilayer graphene; electrical characteristics; monolayer graphene; negative differential resistance; nonequilibrium Green´s function; p-n junctions; parameter space; self consistent solution; temperature 293 K to 298 K; tight binding model; Analytical models; Anodes; Cathodes; Mathematical model; P-n junctions; Resistance; Transistors; Bilayer graphene; Esaki diodes; NEGF; monolayer; quantum tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2162392

Filename

5999697