High-Performance Pentacene Thin-Film Transistors Fabricated by Printing Technology

Author

Changhun Yun ; Minseok Kim ; Seung Won Lee ; Hanul Moon ; Sunmin Park ; Jae Bon Koo ; Jeong Won Kim ; In-Kyu You ; Seunghyup Yoo

Author_Institution

Dept. of Electr. Eng., KAIST, Daejeon, South Korea

Volume

32

Issue

10

fYear

2011

Firstpage

1454

Lastpage

1456

Abstract

A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset printing of a nanosilver paste ink to the source/drain electrodes and organic vapor-jet printing to the thin pentacene layer, TFTs with a channel length of 20 μm are realized in a precise yet relatively simple fashion. The oxide formed during the processing of the silver ink is shown to help reduce the injection barrier between the source and pentacene, making it possible to realize high-performance bottom-contact TFTs without special treatment for the electrodes.

Keywords

printing; thin film transistors; bottom-contact pentacene thin-film transistor; injection barrier reduction; nanosilver paste ink; organic vapor-jet printing; reverse offset printing; size 20 mum; source-drain electrodes; Electrodes; Ink; Organic thin film transistors; Pentacene; Printing; Organic thin-film transistor (OTFT); organic vapor-jet printing (OVJP); pentacene; printed electronics; reverse offset printing (ROP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2162483

Filename

5999699