• DocumentCode
    1307432
  • Title

    A novel modeling technique for efficiently computing 3-D capacitances of VLSI multilevel interconnections-BFEM

  • Author

    Hou, Hsin-Ming ; Sheen, Chin-Shown ; Wu, Ching-Yuan

  • Author_Institution
    Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    45
  • Issue
    1
  • fYear
    1998
  • fDate
    1/1/1998 12:00:00 AM
  • Firstpage
    200
  • Lastpage
    205
  • Abstract
    An efficient method is presented to model the parasitic three-dimensional (3-D) capacitance of VLSI multilevel interconnections. Based on the boundary-finite-element method (BFEM) of integral formulation, arbitrary triangle elements on the surface of conductors for charge distribution are used to efficiently calculate capacitances of both parallel conductors and complicated configurations such as crossing lines, corners, contacts, and their combinations. Using an adaptive multilevel Green´s function and low-order polynomials as shape function, we apply the Galerkin principle over finite elements, and most of the surface integrals of charge distribution can be evaluated analytically and the singular integrals can be eliminated by choosing proper coordinate transformation. Moreover, an even less complex and more general method for arbitrary geometry configuration of multilevel interconnection lines is proposed in order to link with the finite element pre-processor in present CAD tools
  • Keywords
    Galerkin method; Green´s function methods; VLSI; boundary-elements methods; capacitance; finite element analysis; integrated circuit interconnections; integrated circuit modelling; BFEM model; CAD; Galerkin principle; VLSI multilevel interconnection; adaptive Green function; boundary-finite-element method; charge distribution; coordinate transformation; parallel conductor; parasitic three-dimensional capacitance; polynomial; shape function; surface integral; Conductors; Finite element methods; Geometry; Integral equations; Parasitic capacitance; Poisson equations; Polynomials; Shape; Two dimensional displays; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.658831
  • Filename
    658831