DocumentCode
1307432
Title
A novel modeling technique for efficiently computing 3-D capacitances of VLSI multilevel interconnections-BFEM
Author
Hou, Hsin-Ming ; Sheen, Chin-Shown ; Wu, Ching-Yuan
Author_Institution
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
45
Issue
1
fYear
1998
fDate
1/1/1998 12:00:00 AM
Firstpage
200
Lastpage
205
Abstract
An efficient method is presented to model the parasitic three-dimensional (3-D) capacitance of VLSI multilevel interconnections. Based on the boundary-finite-element method (BFEM) of integral formulation, arbitrary triangle elements on the surface of conductors for charge distribution are used to efficiently calculate capacitances of both parallel conductors and complicated configurations such as crossing lines, corners, contacts, and their combinations. Using an adaptive multilevel Green´s function and low-order polynomials as shape function, we apply the Galerkin principle over finite elements, and most of the surface integrals of charge distribution can be evaluated analytically and the singular integrals can be eliminated by choosing proper coordinate transformation. Moreover, an even less complex and more general method for arbitrary geometry configuration of multilevel interconnection lines is proposed in order to link with the finite element pre-processor in present CAD tools
Keywords
Galerkin method; Green´s function methods; VLSI; boundary-elements methods; capacitance; finite element analysis; integrated circuit interconnections; integrated circuit modelling; BFEM model; CAD; Galerkin principle; VLSI multilevel interconnection; adaptive Green function; boundary-finite-element method; charge distribution; coordinate transformation; parallel conductor; parasitic three-dimensional capacitance; polynomial; shape function; surface integral; Conductors; Finite element methods; Geometry; Integral equations; Parasitic capacitance; Poisson equations; Polynomials; Shape; Two dimensional displays; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.658831
Filename
658831
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