• DocumentCode
    1307444
  • Title

    Investigation of the low field leakage current mechanism in polysilicon TFT´s

  • Author

    Lui, O.K.B. ; Quinn, M.J. ; Tam, S.W.-B. ; Brown, T.M. ; Migliorato, P. ; Ohshima, H.

  • Author_Institution
    Dept. of Eng., Cambridge Univ., UK
  • Volume
    45
  • Issue
    1
  • fYear
    1998
  • fDate
    1/1/1998 12:00:00 AM
  • Firstpage
    213
  • Lastpage
    217
  • Abstract
    Following extensive characterization and simulation of the behavior of low-temperature laser recrystallized polysilicon thin-film transistors (TFT´s), we propose a low field leakage current mechanism which explains to a good degree of accuracy at a low drain to source voltage (VDS) the dependence of the leakage current on the device´s active layer thickness, density-of-states (DOS), bias-stress degradation and active layer length
  • Keywords
    elemental semiconductors; leakage currents; silicon; thin film transistors; Si; active layer length; active layer thickness; bias-stress degradation; density of states; drain to source voltage; low field leakage current; low-temperature laser recrystallized thin-film transistor; polysilicon TFT; simulation; Appropriate technology; Data mining; Degradation; Displays; Laser modes; Leakage current; Medical simulation; Temperature; Thin film transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.658833
  • Filename
    658833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1307444