Title :
Investigation of the low field leakage current mechanism in polysilicon TFT´s
Author :
Lui, O.K.B. ; Quinn, M.J. ; Tam, S.W.-B. ; Brown, T.M. ; Migliorato, P. ; Ohshima, H.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
1/1/1998 12:00:00 AM
Abstract :
Following extensive characterization and simulation of the behavior of low-temperature laser recrystallized polysilicon thin-film transistors (TFT´s), we propose a low field leakage current mechanism which explains to a good degree of accuracy at a low drain to source voltage (VDS) the dependence of the leakage current on the device´s active layer thickness, density-of-states (DOS), bias-stress degradation and active layer length
Keywords :
elemental semiconductors; leakage currents; silicon; thin film transistors; Si; active layer length; active layer thickness; bias-stress degradation; density of states; drain to source voltage; low field leakage current; low-temperature laser recrystallized thin-film transistor; polysilicon TFT; simulation; Appropriate technology; Data mining; Degradation; Displays; Laser modes; Leakage current; Medical simulation; Temperature; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
