Title :
Macromodel development for a FLOTOX EEPROM
Author :
Noren, Kenneth V. ; Meng, Ming
Author_Institution :
Microelectron. Res. & Commun. Inst., Idaho Univ., Moscow, ID, USA
fDate :
1/1/1998 12:00:00 AM
Abstract :
A macromodel for use in SPICE-based computer simulators for a FLOTOX EEPROM cell is developed. The model is suitable for DC and transient simulations and programming/erasing cycles. The modeled characteristics include threshold voltage changes, drain current, tunneling current, and charge retention. Model simulations are presented and compared with measurement data available in the literature
Keywords :
EPROM; SPICE; circuit analysis computing; equivalent circuits; integrated circuit modelling; integrated memory circuits; semiconductor device models; transient analysis; DC simulation; EEPROM cell model; FLOTOX EEPROM; SPICE-based computer simulator; charge retention; drain current; macromodel development; programming/erasing cycles; threshold voltage changes; transient simulation; tunneling current; Capacitance; Character generation; Circuit simulation; Computational modeling; Computer simulation; EPROM; Electrons; Integrated circuit modeling; Threshold voltage; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
