DocumentCode
1307455
Title
Macromodel development for a FLOTOX EEPROM
Author
Noren, Kenneth V. ; Meng, Ming
Author_Institution
Microelectron. Res. & Commun. Inst., Idaho Univ., Moscow, ID, USA
Volume
45
Issue
1
fYear
1998
fDate
1/1/1998 12:00:00 AM
Firstpage
224
Lastpage
229
Abstract
A macromodel for use in SPICE-based computer simulators for a FLOTOX EEPROM cell is developed. The model is suitable for DC and transient simulations and programming/erasing cycles. The modeled characteristics include threshold voltage changes, drain current, tunneling current, and charge retention. Model simulations are presented and compared with measurement data available in the literature
Keywords
EPROM; SPICE; circuit analysis computing; equivalent circuits; integrated circuit modelling; integrated memory circuits; semiconductor device models; transient analysis; DC simulation; EEPROM cell model; FLOTOX EEPROM; SPICE-based computer simulator; charge retention; drain current; macromodel development; programming/erasing cycles; threshold voltage changes; transient simulation; tunneling current; Capacitance; Character generation; Circuit simulation; Computational modeling; Computer simulation; EPROM; Electrons; Integrated circuit modeling; Threshold voltage; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.658835
Filename
658835
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