• DocumentCode
    1307507
  • Title

    Extension of the collector charge description for compact bipolar epilayer models

  • Author

    De Vreede, Leo C N ; De Graaff, Henk C. ; Tauritz, Joseph L. ; Baets, Roel G F

  • Author_Institution
    Inst. of Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
  • Volume
    45
  • Issue
    1
  • fYear
    1998
  • fDate
    1/1/1998 12:00:00 AM
  • Firstpage
    277
  • Lastpage
    285
  • Abstract
    In this paper, an extension to the collector charge description for compact bipolar epilayer models is presented. With this extension, monotonic fT and Early-voltage behavior is ensured when transistor operation extends into the quasi-saturation region. The modification leads to a major improvement in the modeling of nonlinear distortion at high current levels and high frequencies
  • Keywords
    bipolar transistors; doping profiles; electric distortion; semiconductor device models; semiconductor doping; Early-voltage behavior; bipolar transistors; collector charge description; compact bipolar epilayer models; current levels; nonlinear distortion; quasi-saturation region; transistor operation; Bipolar transistors; Charge carriers; Circuits; Critical current density; Frequency; Hot carriers; Microwave technology; Nonlinear distortion; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.658842
  • Filename
    658842
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1307507