IGBT with shallow emitter ballast

Author

Venkatesan, V. ; Fragale, W. ; Zuniga, V. ; Shifeng Lu

Author_Institution

Semicond. Products Sector, Motorola Inc., Mesa, AZ

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

329

Lastpage

331

Abstract

Two approaches of forming IGBTs with shallow emitter ballast have been investigated in this study. These designs are compared in terms of their layout scheme, fabrication steps and device performance. This shallow emitter ballast provides the necessary trade-off between on-state and ruggedness of IGBTs. Using this concept 600 V IGBTs with an on-voltage of ~1.6 V@100 A/cm², turn-off energy of ~30 μJ/A, short-circuit time of ~27 μs, and a maximum UIS energy of ~13.4 mJ/A have been fabricated

Keywords

insulated gate bipolar transistors; ion implantation; photolithography; power semiconductor switches; semiconductor device testing; short-circuit currents; 1.6 V; 27 mus; 600 V; IGBT; device performance; double implanted emitter; emitter injection efficiency; fabrication steps; layout scheme; maximum UIS energy; on-voltage; photoresist step; ruggedness; shallow emitter ballast; short-circuit time; turn-off energy; Bipolar transistors; Circuit simulation; Electronic ballasts; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Insulated gate bipolar transistors; Medical simulation; SPICE; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658850

Filename

658850