Space-charge generation-recombination current in an abrupt P-N junction subjected to small bias voltage

Author

Gaci, Amar ; Raiff, Bertrand ; Ahmadpanah, Majid ; Boucher, Jacques

Author_Institution

Lab. d´´Electron., ENSEEIHT, Toulouse, France

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

331

Lastpage

334

Abstract

A new modeling is proposed for the space-charge generation-recombination current in a P-N junction, based on the Boltzmann statistics and by accounting for the free carriers in the space-charge region (SCR). This model, which does not necessitate the knowledge of the x-variation of the potential in the SCR, is shown to provide more accurate results than those furnished by the available models and the corresponding model used in SPICE. The proposed model can be easily incorporated in the P-N junction characterization of SPICE or any other similar circuit simulator

Keywords

Boltzmann equation; SPICE; current density; p-n junctions; semiconductor device models; space charge; Boltzmann statistics; SPICE; abrupt P-N junction; circuit simulator; free carriers; modeling; small bias voltage; space-charge generation-recombination current; Circuit faults; Electronic ballasts; Insulated gate bipolar transistors; P-n junctions; Power semiconductor devices; Protection; SPICE; Semiconductor device manufacture; Semiconductor devices; Thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658851

Filename

658851