Title :
Influence of profile shape factors on intrinsic Si-MESFET device capacitances under diffusion mechanism
Author :
Rajesh, S. ; Thomas, Cedric ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ.
fDate :
1/1/1998 12:00:00 AM
Abstract :
An accurate model for the device capacitances of ion-implanted MESFETs using Pearson distribution annealing is reported. The effects of profile shape factors on the intrinsic gate-source and gate-drain capacitances are analyzed in the pre- and post-anneal conditions. An established reduction in capacitances with Pearson´s higher moments approach leads to optimization of devices performances
Keywords :
Schottky gate field effect transistors; annealing; capacitance; diffusion; doping profiles; ion implantation; semiconductor device models; semiconductor process modelling; Pearson distribution annealing; Pearson higher moments approach; Si; devices performance optimization; diffusion mechanism; intrinsic Si-MESFET device capacitance; intrinsic gate-drain capacitance; intrinsic gate-source capacitance; ion-implanted MESFET; model; post-anneal condition; pre-anneal condition; profile shape factors; Annealing; Capacitance; FETs; Fabrication; MESFETs; Schottky diodes; Semiconductor devices; Semiconductor diodes; Shape; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
