Influence of profile shape factors on intrinsic Si-MESFET device capacitances under diffusion mechanism

Author

Rajesh, S. ; Thomas, Cedric ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Delhi Univ.

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

334

Lastpage

336

Abstract

An accurate model for the device capacitances of ion-implanted MESFETs using Pearson distribution annealing is reported. The effects of profile shape factors on the intrinsic gate-source and gate-drain capacitances are analyzed in the pre- and post-anneal conditions. An established reduction in capacitances with Pearson´s higher moments approach leads to optimization of devices performances

Keywords

Schottky gate field effect transistors; annealing; capacitance; diffusion; doping profiles; ion implantation; semiconductor device models; semiconductor process modelling; Pearson distribution annealing; Pearson higher moments approach; Si; devices performance optimization; diffusion mechanism; intrinsic Si-MESFET device capacitance; intrinsic gate-drain capacitance; intrinsic gate-source capacitance; ion-implanted MESFET; model; post-anneal condition; pre-anneal condition; profile shape factors; Annealing; Capacitance; FETs; Fabrication; MESFETs; Schottky diodes; Semiconductor devices; Semiconductor diodes; Shape; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658852

Filename

658852