Title :
High performance resonant tunnelling structures on GaAs substrates
Author :
Riechert, H. ; Bernklau, D. ; Reithmaier, J.-P. ; Schnell, R.D.
Author_Institution :
Siemens Res. Labs., Munchen, West Germany
fDate :
3/1/1990 12:00:00 AM
Abstract :
GaAs-based resonant tunnelling structures of high quality were grown by molecular beam epitaxy. Room temperature peak-to-valley ratios of 4.8 for a GaAs/AlGaAs double barrier quantum well, 4.1 for GaAs/AlGaAs with InGaAs quantum well and 5.9 for GaAs/AlGaAs with adjacent InGaAs ´prewell´ were obtained, in connection with reasonable peak current densities.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor quantum wells; tunnelling; GaAs substrate; GaAs-AlGaAs double barrier quantum well; GaAs-AlGaAs-InGaAs; III-V semiconductors; InGaAs quantum well; adjacent InGaAs prewell; double barrier quantum well; molecular beam epitaxy; peak current densities; peak-to-valley ratios; resonant tunnelling structures; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900223
