• DocumentCode
    1307643
  • Title

    Quantitative model of radiation induced charge trapping in SiO2

  • Author

    Conley, J.F., Jr. ; Lenahan, P.M. ; Wallace, B.D. ; Cole, P.

  • Author_Institution
    Dept. of Commercial Syst., Dynamics Res. Corp., Beaverton, OR, USA
  • Volume
    44
  • Issue
    6
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    1804
  • Lastpage
    1809
  • Abstract
    A predictive model of radiation induced oxide charging, thermodynamics and electron spin resonance measurements of defects known as E´ centers, has been developed. The model is successfully tested on 60Co irradiated MOSFETs
  • Keywords
    EPR spectroscopy; MOSFET; gamma-ray effects; hole traps; insulating thin films; semiconductor device models; E´ centers; SiO2; electron spin resonance measurements; irradiated MOSFETs; oxide charging; predictive model; quantitative model; radiation induced charge trapping; thermodynamics; Atomic measurements; Charge carrier processes; Electron traps; Energy states; Entropy; Lattices; Paramagnetic resonance; Solids; Temperature dependence; Thermodynamics;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.658946
  • Filename
    658946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1307643