Title :
Estimation of temperature limit for negative differential resistance using resonant tunnelling
Author :
Pol, L. De Saint ; Vanbesien, O. ; Lippens, D.
Author_Institution :
Centre Hyperfrequences et Semicond., CNRS, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fDate :
3/1/1990 12:00:00 AM
Abstract :
The temperature limit of negative differential resistance devices using resonant tunnelling in double-barrier heterostructures is derived as a function of structural parameters. The validity of the estimation is supported by computer simulation and experimental investigations on temperature dependencies of current/voltage characteristics by changing the barrier thickness.
Keywords :
negative resistance; semiconductor junctions; tunnelling; barrier thickness; computer simulation; current/voltage characteristics; double-barrier heterostructures; experimental investigations; negative differential resistance devices; resonant tunnelling; semiconductor junctions; structural parameters; temperature dependencies; temperature limit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900224
