Vertical integration of an In0.15Ga0.85As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy

A vertically integrated structure consisting of an In_0.15Ga_0.85As pseudomorphic modulation doped field effect transistor (MODFET) and a GaAs graded index separate confinement heterostructure single quantum well (GRINSCH SQW) laser was grown by molecular beam epitaxy. Wafers containing integrated MODFET/laser layers produced MODFETs with DC and microwave performance comparable to wafers containing only MODFET layers, indicating that the modulation doping and the strained In_0.15Ga_0.85As channel were largely unaffected by the long, high temperature laser growth. The lasers had threshold currents similar to identical structures grown on n-type substrates and the integrated structures had a -3dB modulation bandwidth of 3.5 GHz.