The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

Author

Pershenkov, V.S. ; Maslov, V.B. ; Cherepko, S.V. ; Shvetzov-Shilovsky, I.N. ; Belyakov, V.V. ; Sogoyan, A.V. ; Rusanovsky, V.I. ; Ulimov, V.N. ; Emelianov, V.V. ; Nasibullin, V.S.

Author_Institution

Moscow Eng. Phys. Inst., Russia

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

1840

Lastpage

1848

Abstract

It is shown that emitter-base junction bias is significant for low dose rate irradiation response of npn and pnp bipolar transistors. The effect is more pronounced for pnp transistor. Experimental results are explained in terms of fringing electric field model. The role of fringing field is confirmed by the radiation induced charge neutralization experiment. The experimental results on the effect of emitter junction bias on the elevated temperature high dose rate irradiation of bipolar devices and its application for low dose rate response simulation are discussed

Keywords

X-ray effects; beta-ray effects; bipolar transistors; elevated temperature; emitter junction bias; fringing electric field model; low dose-rate radiation response; npn bipolar transistor; pnp bipolar transistor; radiation induced charge neutralization; simulation; BiCMOS integrated circuits; Bipolar transistors; Degradation; Instruments; MOS devices; Physics; Pins; Simulated annealing; Temperature measurement; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.658951

Filename

658951