Title :
Integrity of III-V heterojunction interfaces under gamma irradiation
Author :
Subramanian, S. ; Sarkar, A. ; Ungier, L. ; Goodnick, S.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, we present some results of our investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements
Keywords :
Hall effect; III-V semiconductors; characteristics measurement; gamma-ray effects; p-n heterojunctions; photoluminescence; semiconductor device reliability; 0 to 40 Mrad; C-V measurements; Hall measurements; III-V heterojunction interfaces; gamma irradiation; photoluminescence measurements; reliability; semiconductor heterostructure devices; strong radiation environment; Atomic layer deposition; Atomic measurements; Capacitance-voltage characteristics; Epitaxial layers; Gallium arsenide; Heterojunctions; III-V semiconductor materials; Molecular beam epitaxial growth; Ohmic contacts; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
