DocumentCode
1307691
Title
Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 mu m
Author
Bigan, E. ; Allovon, M. ; Carre, M. ; Carenco, A.
Author_Institution
CNET, Lab. de Bagneux, France
Volume
26
Issue
6
fYear
1990
fDate
3/15/1990 12:00:00 AM
Firstpage
355
Lastpage
357
Abstract
Strain is used to tailor the absorption edge of thick (100 AA) quantum wells. This allows efficient modulation at 1.55 mu m. An extinction ratio of 18 dB has been achieved by applying a reverse bias of 6 V to a 160 mu m long waveguide device.
Keywords
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical communication equipment; optical modulation; optical waveguides; semiconductor quantum wells; 1.55 micron; 160 micron; 6 V; III-V semiconductors; InGaAs-InAlAs strained layer multiple quantum wells; absorption edge; extinction ratio; optical waveguide modulation; quantum-confined Stark effect; reverse bias; waveguide device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900231
Filename
82661
Link To Document