DocumentCode
1307711
Title
G-Band Injection-Locked Frequency Dividers Using
-type LC Networks
Author
Lee, I-Ting ; Liu, Shen-Iuan
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
59
Issue
2
fYear
2012
Firstpage
315
Lastpage
323
Abstract
Two high-frequency CMOS injection-locked frequency dividers (ILFDs) are realized by π-type LC networks. The frequency enhancement analysis and design considerations for the both ILFDs are given. The effects of vias and interconnections on the inductance and quality factor are also discussed. Both ILFDs have been fabricated in 65 nm CMOS process. The measured locking ranges of these two ILFDs are 182.7-185.7 GHz and 192.4-194.06 GHz, respectively.
Keywords
CMOS integrated circuits; LC circuits; field effect MIMIC; frequency dividers; π-type LC networks; G-band injection-locked frequency dividers; ILFD; frequency enhancement analysis; high-frequency CMOS injection-locked frequency dividers; Capacitance; Frequency conversion; Inductance; Inductors; Integrated circuit interconnections; Oscillators; Q factor; $pi$ -type LC network; Frequency dividers; ILFD; injection-locked;
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2011.2162462
Filename
5999739
Link To Document