DocumentCode :
1307711
Title :
G-Band Injection-Locked Frequency Dividers Using 
-type LC Networks
Author :
Lee, I-Ting ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
59
Issue :
2
fYear :
2012
Firstpage :
315
Lastpage :
323
Abstract :
Two high-frequency CMOS injection-locked frequency dividers (ILFDs) are realized by π-type LC networks. The frequency enhancement analysis and design considerations for the both ILFDs are given. The effects of vias and interconnections on the inductance and quality factor are also discussed. Both ILFDs have been fabricated in 65 nm CMOS process. The measured locking ranges of these two ILFDs are 182.7-185.7 GHz and 192.4-194.06 GHz, respectively.
Keywords :
CMOS integrated circuits; LC circuits; field effect MIMIC; frequency dividers; π-type LC networks; G-band injection-locked frequency dividers; ILFD; frequency enhancement analysis; high-frequency CMOS injection-locked frequency dividers; Capacitance; Frequency conversion; Inductance; Inductors; Integrated circuit interconnections; Oscillators; Q factor; $pi$
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2011.2162462
Filename :
5999739
Link To Document :
