Title :
Engineering model of MOS transistors for the 60-300 K temperature range
Author :
Huang, C.-L. ; Gildenblat, G.S.
Author_Institution :
Penn State Univ., University Park, PA, USA
fDate :
3/15/1990 12:00:00 AM
Abstract :
The authors present the first engineering model of short-channel MOS transistors that is applicable to cryogenic CMOS. The new model incorporates the nonuniversal dependence of the effective channel mobility on the effective vertical field which is ignored in the room temperature device models. The proposed model is verified by comparison with experimental device characteristics obtained over a wide range of temperatures and channel lengths.
Keywords :
cryogenics; insulated gate field effect transistors; semiconductor device models; 60 to 300 K; MOSFET model; channel lengths; cryogenic CMOS; effective channel mobility; effective vertical field; engineering model; experimental device characteristics; low temperature range; nonuniversal dependence; short-channel MOS transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900238
