Title :
Hydrogen passivation of high purity n-type InP
Author :
Lancefield, D. ; Waterhouse, K. ; Adams, A.R. ; Greene, P.D. ; Glew, R.W.
fDate :
3/15/1990 12:00:00 AM
Abstract :
It has been shown for the first time that the concentration of ionised impurities in n-type InP can be reduced by incorporation of atomic hydrogen. The temperature dependence of the electron mobility indicates that donors as well as acceptors are passivated, although the hydrogen is more strongly bound when passivating acceptors.
Keywords :
Hall effect; III-V semiconductors; carrier density; carrier mobility; electrical conductivity of crystalline semiconductors and insulators; hydrogen; impurity electron states; indium compounds; passivation; Hall mobility; Hall scattering factor; III-V semiconductors; InP:Fe; InP:Fe, H; acceptor passivation; atomic hydrogen; donor passivation; electron mobility; hydrogen passivation; ionised impurity concentration; n-type InP; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900241
