Title :
Optical activity induced in Bi4Ge3O12 waveguides by ion implantation
Author :
Mahdavi, S.M. ; Townsend, P.D.
Author_Institution :
Sch. of Math. & Phys. Sci., Sussex Univ., Brighton, UK
fDate :
3/15/1990 12:00:00 AM
Abstract :
The authors report data for ion implanted Bi4Ge3O12 in which the modified material becomes optically active. The optical rotary power, after implantation and annealing, increases from zero to some 90 degrees /mm. The effect is attributed to an ion beam induced relaxation to a modified BiGeO phase.
Keywords :
bismuth compounds; helium; ion implantation; optical materials; optical waveguides; refractive index; Bi 4Ge 3O 12:He +; annealing; induced optical activity; ion beam induced relaxation; ion implantation; modified BiGeO phase; modified material; optical rotary power; optical waveguides; refractive index profiles;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900242
