DocumentCode
1307822
Title
Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena
Author
Chabrerie, C. ; Autran, J.L. ; Paillet, P. ; Flament, O. ; Leray, J.L. ; Boudenot, J.C.
Author_Institution
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Volume
44
Issue
6
fYear
1997
fDate
12/1/1997 12:00:00 AM
Firstpage
2007
Lastpage
2012
Abstract
In this work, the evolution of the oxide trapped charge has been modeled, to predict post-irradiation behavior for arbitrary anneal conditions (i.e. arbitrary temperature-time profiles). Using experimental data obtained from a single isochronal anneal, the method consists of calculating the evolution of the energy distribution of the oxide trapped charge, in the framework of a thermally activated charge detrapping model. This methodology is illustrated in this paper by the prediction of experimental isothermal data from isochronal measurements. The implications of these results to hardness assurance test methods are discussed
Keywords
MIS devices; annealing; electron traps; radiation hardening (electronics); semiconductor device testing; MOS device; energy distribution; hardness assurance test; isochronal annealing; isothermal annealing; oxide trapped charge; post-irradiation temperature activated phenomena; thermally activated charge detrapping model; Acceleration; Annealing; Electronic equipment testing; Interface states; Isothermal processes; Predictive models; Qualifications; System testing; Temperature dependence; Temperature distribution;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.658982
Filename
658982
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