• DocumentCode
    1307822
  • Title

    Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena

  • Author

    Chabrerie, C. ; Autran, J.L. ; Paillet, P. ; Flament, O. ; Leray, J.L. ; Boudenot, J.C.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
  • Volume
    44
  • Issue
    6
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    2007
  • Lastpage
    2012
  • Abstract
    In this work, the evolution of the oxide trapped charge has been modeled, to predict post-irradiation behavior for arbitrary anneal conditions (i.e. arbitrary temperature-time profiles). Using experimental data obtained from a single isochronal anneal, the method consists of calculating the evolution of the energy distribution of the oxide trapped charge, in the framework of a thermally activated charge detrapping model. This methodology is illustrated in this paper by the prediction of experimental isothermal data from isochronal measurements. The implications of these results to hardness assurance test methods are discussed
  • Keywords
    MIS devices; annealing; electron traps; radiation hardening (electronics); semiconductor device testing; MOS device; energy distribution; hardness assurance test; isochronal annealing; isothermal annealing; oxide trapped charge; post-irradiation temperature activated phenomena; thermally activated charge detrapping model; Acceleration; Annealing; Electronic equipment testing; Interface states; Isothermal processes; Predictive models; Qualifications; System testing; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.658982
  • Filename
    658982