Single event latchup threshold estimation based on laser dose rate test results

Author

Chumakov, A.I. ; Egorov, A.N. ; Mavritsky, O.B. ; Nikiforov, A.Y. ; Yanenko, A.V.

Author_Institution

Specialized Electron. Syst., Moscow, Russia

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2034

Lastpage

2039

Abstract

Single event latchup is one of the dominant CMOS IC failure effects in the space environment. Latchup comparative experimental and software simulation research were performed at various laser wavelengths, pulse durations and spot sizes. Single event to dose rate latchup correlation was found that provides the possibility of SEL threshold energy prediction based on laser dose rate test results

Keywords

CMOS integrated circuits; circuit analysis computing; digital simulation; failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; laser beam effects; space vehicle electronics; CMOS; IC failure effects; SEL threshold energy prediction; laser dose rate test results; laser wavelengths; pulse durations; single event latchup threshold estimation; software simulation; space environment; spot sizes; Absorption; Electronic equipment testing; Ionization; Laser beams; Optical beams; Optical pulse generation; Optical pulses; Performance evaluation; Strips; System testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.658986

Filename

658986