Title :
Single event latchup threshold estimation based on laser dose rate test results
Author :
Chumakov, A.I. ; Egorov, A.N. ; Mavritsky, O.B. ; Nikiforov, A.Y. ; Yanenko, A.V.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
fDate :
12/1/1997 12:00:00 AM
Abstract :
Single event latchup is one of the dominant CMOS IC failure effects in the space environment. Latchup comparative experimental and software simulation research were performed at various laser wavelengths, pulse durations and spot sizes. Single event to dose rate latchup correlation was found that provides the possibility of SEL threshold energy prediction based on laser dose rate test results
Keywords :
CMOS integrated circuits; circuit analysis computing; digital simulation; failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; laser beam effects; space vehicle electronics; CMOS; IC failure effects; SEL threshold energy prediction; laser dose rate test results; laser wavelengths; pulse durations; single event latchup threshold estimation; software simulation; space environment; spot sizes; Absorption; Electronic equipment testing; Ionization; Laser beams; Optical beams; Optical pulse generation; Optical pulses; Performance evaluation; Strips; System testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
