Abstract :
Advances in process technology are making possible the fabrication of Schottky barriers with reliable, ideal electrical characteristics. With these advances, one can anticipate a rapid increase in the utilization of Schottky barriers, not only as discrete devices but also as a new component in integrated circuits. This article presents a unified picture that quantitatively characterizes both the Schottky barrier and ohmic contacts on silicon. Fabrication techniques and various applications are also discussed.
