• DocumentCode
    1308179
  • Title

    Gallium arsenide MBE structure comprising mixer diodes and FETs for monolithic millimetre-wave receivers

  • Author

    Archer, J.A.

  • Author_Institution
    Varian Associates Inc., Santa Carla, CA, USA
  • Volume
    26
  • Issue
    6
  • fYear
    1990
  • fDate
    3/15/1990 12:00:00 AM
  • Firstpage
    384
  • Lastpage
    385
  • Abstract
    The formation of millimetre-wave GaAs mixer diodes and 0.5 mu m gate FETs on the same wafer has been demonstrated using a three-layer MBE structure. The diodes have a measured cut-off frequency of 780 GHz and the FETs typically exhibit fmax greater than 50 GHz. This technology is suitable for the implementation of monolithic microwave and millimetre-wave receivers.
  • Keywords
    III-V semiconductors; MMIC; Schottky-barrier diodes; field effect integrated circuits; gallium arsenide; mixers (circuits); molecular beam epitaxial growth; receivers; 0.5 micron; 50 GHz; 780 GHz; EHF; FETs; GaAs; III-V semiconductors; MIMIC; MM-wave ICs; MMIC; Schottky diodes; microwave receivers; mixer diodes; monolithic millimetre-wave receivers; submicron gate devices; three-layer MBE structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900250
  • Filename
    82680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1308179